ZDT6753(1996) 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZDT6753
(Rev.:1996)

SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS

Diodes Incorporated. 

ZDT6753

NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO 120

V

IC=100µA, IE =0

Collector-Emitter

Breakdown Voltage

V(BR)CEO 100

V

IC=10mA, IB =0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5

V

IE=100µA, IC =0

Collector Cutoff

ICBO

Current

Emitter Cutoff Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

Base-Emitter

Saturation Voltage

VBE(sat)

0.1 µA

10

µA

0.1 µA

0.13 0.3 V

0.23 0.5

0.9 1.25 V

VCB=100V

VCB=100V,Tamb=100°C

VEB=4V, IC =0

IC=1A, IB=100mA*

IC=2A, IB=200mA*

IC=1A, IB=100mA*

Base-Emitter

Turn-On Voltage

VBE(on)

0.8 1

V

IC=1A, VCE=2V*

Static Forward

hFE

Current Transfer Ratio

Transition Frequency fT

70

200

100 200 300

55

110

25

55

IC=50mA, VCE=2V

IC=500mA, VCE=2V*

IC=1A, VCE=2V*

IC=2A, VCE=2V*

140 175

MHz IC=100mA, VCE=5V

f=100MHz

Output Capacitance Cobo

30

pF

VCB=10V, f=1MHz

Switching Times

ton

80

ns

toff

1200

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FZT653 datasheet.

IC=500mA, VCE=10V

IB1=IB2=50mA

3 - 376

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