ZDT6753(1996) 데이터 시트보기 (PDF) - Diodes Incorporated.
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ZDT6753 Datasheet PDF : 3 Pages
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ZDT6753
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -120
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -100
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cutoff
ICBO
Current
Emitter Cutoff Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.1 µA
-10 µA
-0.1 µA
-0.17 -0.3 V
-0.30 -0.5 V
-0.90 -1.25 V
VCB=-100V
VCB=-100V, Tamb=100°C
VEB=-4V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
Base-Emitter Turn-On VBE(on)
Voltage
-0.8 -1.0 V
IC=-1A, VCE=-2V*
Static Forward
hFE
Current Transfer Ratio
Transition Frequency fT
70
200
100 200 300
55
170
25
55
IC=-50mA, VCE=-2V
IC=-500mA, VCE=-2V*
IC=-1A, VCE=2V*
IC=-2A, VCE=-2V*
100 140
MHz IC=-100mA, VCE=5V
f=100MHz
Output Capacitance Cobo
30
pF
VCE=-10V, f=1MHz
Switching Times
ton
40
ns
toff
600
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FZT753 datasheet.
IC=-500mA, VCC=-10V
IB1=IB2=50mA
3 - 377
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