IRFF430 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRFF430 Datasheet PDF : 2 Pages
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2N6802
IRFF430
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max.
STATIC ELECTRICAL RATINGS
BVDss Drain - Source Breakdown Voltage VGS = 0
ID = 1mA
500
ABVDss Temperature Coefficient of
Reference to 25°C
0.43
ATj Breakdown Voltage
ID = 1mA
Static Drain - Source On-State
VGS = 10V
ID = ISA
1.5
RDS<on) Resistance
VGS -10V
ID = 2.5A
1.725
Vcs(th) Gate Threshold Voltage
VDS = VGS
ID = 250uA
2
4
gfs
Forward Transconductance
VDS > 15V
IDS= 15A
1.5
VGS-O
VDS = 0.8BVDSS
25
IDSS Zero Gate Voltage Drain Current
Tj=125"C
250
IGSS Forward Gate - Source Leakage
VGS = 20V
100
IGSS Reverse Gate - Source Leakage
VGS = -20V
-100
DYNAMIC CHARACTERISTICS
Cjss Input Capacitance
VGS = 0
610
Coss Output Capacitance
VDS = 25V
135
Crss ReverseTransfer Capacitance
f=1MHz
65
Qg
Total Gate Charge
VGS = 10V
19.8
29.5
Qgs Gate - Source Charge
VDS = 0.5BVDS
2.2
4.6
Qgd Gate - Drain ("Miller") Charge
ID = 2.5A
5.5
19.7
*d(on) Turn-On Delay Time
ID =2.5A
30
tr
Rise Time
VDS = 0.5BVDS
30
*d(off) Turn-Off Delay Time
RG = 7.5Q
55
tf
Fall Time
30
SOURCE - DRAIN DIODE CHARACTERISTICS
Is
Continuous Source Current
2.5
ISM Pulse Source Current 2
s = 2.5A
VGS = °
11
VSD Diode Forward Voltage
F = 1.5A
Tj = 25°C
1.4
trr
Reverse Recovery Time
900
Qrr
Reverse Recovery Charge
dj / dt < 100A/US VDD $ 50V
7.0
:on
Forward Turn-On Time
Negligible!
Unit
V
v/°c
Q
V
s(u)
uA
nA
PF
nC
ns
A
V
ns
uC
Notes
1) Pulse Test: Pulse Width < 300us, 5 < 2%
2) Repetitive Rating - Pulse width limited by maximum junction temperature.
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