QM200DY-2H 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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QM200DY-2H Datasheet PDF : 5 Pages
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SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
10 1
7
5
4
3
2
10 0
7
5
4
3
10 0
ts
tf
Tj=25°C
Tj=125°C
VCC=600V
IB1=4A
IC=200A
2 3 4 5 7 101 2 3 4 5 7 102
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 3
7
5
100µs 50µs
3
200µs
2
10 2
DC
7
1ms
5
3
2
10 1
7
5
3
2 TC =25°C
10 0 NON–REPETITIVE
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 710 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 4 5 710 1
0.10
0.08
0.06
0.04
0.02
0
10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
400
Tj=125°C
300
IB2=–10A
IB2=
–4A
200
100
0
0 200 400 600 800 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
90
80
70
60
50
40
30
20
10
0
0
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 3
7
Tj=25°C
Tj=125°C
5
4
3
2
10 2
7
5
4
3
2
10 1
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
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