QM200HC-M 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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QM200HC-M
MITSUBISHI ELECTRIC
QM200HC-M Datasheet PDF : 5 Pages
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SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
2
10 1
7
ts
5
4
3
2
tf
10 0
7
VCC=200V
IC=200A
5
4
IB1=4A
Tj=25°C
3
2
Tj=125°C
3 4 5 7 100 2 3 4 5 7 101
23
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 3
7
5
100µs
3
2
10 2
7
5
3
2
10 1
7
5
3
2 TC =25°C
10 0 NON–REPETITIVE
10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 710 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 4 5 710 1
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10 –3 2 3 4 5 710 –2 2 3 45 710 –1 2 3 45 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
400
Tj=125°C
350
300
250
IB2=–4A
200
150
100
50
0
0 50 100 150 200 250 300 350 400
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
90
80
70
60
50
40
30
20
10
0
0
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 3
7
Tj=25°C
5
Tj=125°C
3
2
10 2
7
5
3
2
10 1
7
5
3
2
10 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
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