Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1168
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCER(SUS) Collector-emitter sustaining voltage IC=5A; RBE=10Ω;L=2mH
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A
VBEsat Base-emitter saturation voltage
IC=2 A;IB=1A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE
DC current gain
IC=1A ; VCE=4V
tf
Fall time
ts
Storage time
IC=1.5 A; IB1=0.2A; IB2=-0.7A
MIN TYP. MAX UNIT
800
V
5
V
1.0
V
1.5
V
0.1
mA
1.0
9
25
0.5
μs
2
μs
hFE Classifications
Q
P
9-18
15-25
2