Silicon NPN Phototransistor
Description
TEFT4300 is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in a standard T–1
(ø 3 mm) plastic package.
y The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with l p 900nm).
The plastic lens provides a wide viewing angle of ±
30°.
Features
D High radiant sensitivity
D Fast response times
D T1 (ø 3 mm) plastic package with IR filter
D Additional polarity sign
D Wide viewing angle ϕ = ± 30°
D Suitable for near infrared radiation
D Matches with TSUS4300 GaAs infrared emitter
Applications
Optical switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
TEFT4300
Vishay Telefunken
94 8637
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x tp/T = 0.5, tp 10 ms
x Tamb 55 °C
xt 3 s, 2 mm from case
Symbol
Value
Unit
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
70
V
5
V
50
mA
100
mA
100
mW
100
°C
–55...+100 °C
260
°C
450
K/W
Document Number 81549
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
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