NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
CGD914; CGD914MI
−40
handbook, halfpage
CTB
(dB)
−50
−60
−70
MCD992
52
(1)
Vo
(dBmV)
48
(2)
44
(3)
(4)
40
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
−50
handbook, halfpage
Xmod
(dB)
−60
MCD993
52
(1)
Vo
(dBmV)
48
(2)
−70
44
(3)
−80
40
(4)
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.19 Cross modulation as a function of frequency
under tilted conditions.
−40
handbook, halfpage
CSO
(dB)
−50
−60
−70
MCD994
52
(1)
Vo
(dBmV)
48
(2)
(3) 44
(4)
40
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.20 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
−40
handbook, halfpage
CSO
(2)
(dB)
−50
(3)
−60
(4)
MCD995
52
Vo
(dBmV)
(1)
48
44
−70
40
−80
36
−90
0
32
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
2001 Nov 01
9