MMBT5401 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd

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상세내역

제조사

MMBT5401

SOT-23 Plastic-Encapsulate Transistors

Jiangsu High diode Semiconductor Co., Ltd 

Typical Characteristics

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

-0

-0

-1.0

-0.8

Static Characteristic

-100uA

-90uA

-80uA

COMMON

EMITTER

Ta=25℃

-70uA

-60uA

-50uA

-40uA

-30uA

-20uA

IB=-10uA

-3

-6

-9

COLLECTOR-EMITTER VOLTAGE VCE (V)

V —— I

BEsat

C

β=10

Ta=25℃

-0.6

Ta=100℃

-0.4

-0.2

-0.0

-0.1

-1

-10

-100

-600

COLLECTOR CURRENT IC (mA)

-100

VCE=-5V

I

C

——

V

BE

-10

Ta=100 oC

-1

Ta=25℃

300

250

200

150

100

50

0

-1

-1

β=10

h —— I

FE

C

Ta=100 oC

VCE=-5V

Ta=25 oC

-10

-100

-600

COLLECTOR CURRENT IC (mA)

V —— I

CEsat

C

Ta=100℃

-0.1

Ta=25℃

-0.01

-0.1

100

10

-1

-10

-100

-600

COLLECTOR CURRENT IC (mA)

C /C

ob

ib

——

V /V

CB

EB

Cib

f=1MHz

IE=0 / IC=0

Ta=25 oC

Cob

-0.1

-0.0

300

250

200

150

100

50

0

-0

-0.2

-0.4

-0.6

-0.8

-1.0

BASE-EMITTER VOLTAGE VBE(V)

f

T

——

I

C

VCE=-5V

Ta=25 oC

-5

-10

-15

-20

-25

-30

COLLECTOR CURRENT IC (mA)

1

-0.5

-1

-10

REVERSE VOLTAGE V (V)

P —— T

0.4

c

a

0.3

0.2

0.1

0.0

0

25

50

75

100

125

150

AMBIENT TEMPERATURE Ta (℃)

High Diode Semiconductor

2

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