FDS4780 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4780 Datasheet PDF : 6 Pages
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Typical Characteristics
80
VGS = 10V 6.0V
70
5.5V
60
50
5.0V
40
30
20
4.5V
10
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8 ID = 10.8A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
80
VDS = 5V
60
TA = -55oC
25oC
125oC
40
20
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
VGS = 5.0V
1.8
1.6
5.5V
1.4
6.0V
1.2
7.0V
8.0V
10V
1
0.8
0
20
40
60
80
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
0.022
ID = 5.4A
0.019
0.016
TA = 125oC
0.013
0.01
TA = 25oC
0.007
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4780 Rev B (W)
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