KSB834Y 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSB834Y

PNP Silicon Epitaxial Transistor

Fairchild Semiconductor 

KSB834

Low Frequency Power Amplifier

• Complement to KSD880

1

TO-220

1.Base 2.Collector 3.Emitter

PNP Silicon Epitaxial Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

PC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (TC=25°C)

Collector Dissipation (Ta=25°C)

Junction Temperature

Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

IEBO

BVCEO

hFE1

hFE2

VCE(sat)

VBE(on)

fT

Cob

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

VCB = - 60V, IE = 0

VEB = - 7V, IC = 0

IC = - 50mA, IB = 0

VCE = - 5V, IC = - 0.5A

VCE = - 5V, IC = - 3A

IC = - 3A, IB = - 0.3A

VCE = - 5V, IC = - 0.5A

VCE = - 5V, IC = - 0.5A

VCB = - 10V, IE = 0

f = 1MHz

tON

TSTG

tF

Turn ON Time

Storage Time

Fall Time

VCC = -30V, IC = - 1A

IB1 = - IB2 = - 0.2A

RL = 30Ω

hFE Classification

Classification

hFE1

O

60 ~ 120

Value

- 60

- 60

-7

-3

- 0.5

30

1.5

150

- 55 ~ 150

Units

V

V

V

A

A

W

W

°C

°C

Min.

- 60

60

20

Typ.

- 0.5

- 0.7

9

150

Max.

- 100

- 100

200

Units

µA

µA

V

-1

V

-1

V

MHz

pF

0.4

µs

1.7

µs

0.5

µs

Y

100 ~ 200

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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