KSD1273 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KSD1273 Datasheet PDF : 5 Pages
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KSD1273
High hFE, AF Power Amplifier
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires
no Insulator.
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
Collector-Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC = 25mA, IB = 0
VCB = 80V, IE = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A
hFE Classification
Classification
hFE
Q
500 ~ 1000
P
800 ~ 1500
Value
80
60
6
3
6
1
2
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
60
500
Typ.
30
Max.
100
100
100
2500
1
Units
V
µA
µA
µA
V
MHz
O
1200 ~ 2500
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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