2SC4995 데이터 시트보기 (PDF) - Renesas Electronics

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2SC4995

Silicon NPN Epitaxial

Renesas Electronics 

2SC4995

Absolute Maximum Ratings

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

15

8

1.5

50

100

150

–55 to +150

(Ta = 25°C)

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage V(BR)CBO 15

Collector cutoff current

ICBO

—

ICEO

—

Emitter cutoff current

IEBO

—

DC current transfer ratio

hFE

50

Collector output capacitance

Cob

—

Gain bandwidth product

S21 Parameter

fT

8.0

|S21|

—

Power gain

PG

13.5

Noise figure

NF

—

Typ

—

—

—

—

120

0.55

11.0

16

16.5

1.1

Max

—

10

1

10

250

1.1

—

—

—

2.0

Unit

V

µA

mA

µA

pF

GHz

dB

dB

dB

(Ta = 25°C)

Test Conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 1000 MHz

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Rev.3.00, Apr.05.2004, page 2 of 9

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