HSM126S 데이터 시트보기 (PDF) - Renesas Electronics

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HSM126S

Silicon Schottky Barrier Diode for System Protection

Renesas Electronics 

HSM126S

Absolute Maximum Ratings *3

(Ta = 25°C)

Item

Repetitive peak reverse voltage

Average forward current

Non-Repetitive peak forward surge current

Junction temperature

Storage temperature

Notes: 1. Sine wave, Two device total

2. 50 Hz half sine wave 1 pulse

3. Per one device

Symbol

VRRM

IO *1

IFSM *2

Tj

Tstg

Value

Unit

20

V

200

mA

2

A

125

°C

−55 to +125

°C

Electrical Characteristics *1

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Reverse current

IR

Forward voltage

VF

Capacitance

C

Note: 1. Per one device





2.0

µA

VR = 5 V





0.35 V

IF = 10 mA

—

40

—

pF

VR = 0 V, f = 1 MHz

Rev.4.00, Jan.28.2004, page 2 of 5

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