HM628511HC 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM628511HC

4M High Speed SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM628511HC Series

Low VCC Data Retention Characteristics (Ta = 0 to +70°C)

This characteristics is guaranteed only for L-version.

Parameter

Symbol Min Typ*1 Max Unit Test conditions

VCC for data retention

VDR

Data retention current

I CCDR

Chip deselect to data

t CDR

retention time

2.0

—

—

V

VCC ≥ CS ≥ VCC – 0.2 V

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

—

TBD 800

µA VCC = 3 V, VCC ≥ CS ≥ VCC – 0.2 V

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

0

—

—

ns See retention waveform

Operation recovery time tR

5

—

—

ms

Note: 1. Typical values are at VCC = 3.0 V, Ta = +25˚C, and not guaranteed.

Low VCC Data Retention Timing Waveform

t CDR

Data retention mode

tR

VCC

4.5 V

2.2 V

VDR

CS

0V

VCC ≥ CS ≥ VCC – 0.2 V

12

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