BD533(1997) 데이터 시트보기 (PDF) - STMicroelectronics
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BD533 Datasheet PDF : 4 Pages
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BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
2.5
Max
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD533/534
for BD535/536
for BD537/538
VCB = 45 V
VCB = 60 V
VCB = 80 V
ICES Collect or Cut-off
Current (VBE = 0)
for BD533/534
for BD535/536
for BD537/538
VCE = 45 V
VCE = 60 V
VCE = 80 V
IEBO Emitt er Cut-off Current
(IC = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VBE∗ Base-Emitt er Voltage
hFE∗ DC Current G ain
VEB = 5 V
IC = 100 mA
IC = 2 A
IC = 6 A
IC = 2 A
IC = 10 mA
IC = 500 mA
IC = 2 A
for BD533/534
for BD535/536
for BD537/538
IB = 0.2 A
IB = 0.6 A
VCE = 2 V
VCE = 5 V
for BD533/534
for BD535/536
for BD537/538
VCE = 2 V
VCE = 2 V
for BD533/534
for BD535/536
for BD537/538
fT
Transit ion f requency IC = 500 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 1 V
Min. Typ.
45
60
80
0.8
20
20
15
40
25
25
15
3
12
M a x.
100
100
100
100
100
100
1
0.8
1.5
Unit
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
MHz
Safe Operating Areas
2/4
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