BDW83D 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BDW83D Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDW83D
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 30mA;lB=0
V
VcE(sat)-1 Collector-Emitter Saturation Voltage ' lc=6A;lB=12mA
2.5
V
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=15A;IB= 150mA
4.0
V
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hpE-1
DC Current Gain
lc= 6A ; VCE= 3V
VCE= 60V; I6= 0
VCB=120V;IE=0
VCB=120V;lE=0;Tc=150°C
VEB= 5V; lc=0
lc= 6A ; VCE= 3V
750
2.5
V
1.0
mA
0.5
5.0
mA
2.0
mA
20000
hpE-2
DC Current Gain
lc=15A;VCE=3V
100
Switching times
ton
Turn-on Time
toff
Turn-off Time
lc=10A;lBi=-lB2=40mA;
RL=3Q;VBE(OFF)=-4.2V
0.9
us
7.0
\i S
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