STP6NB50 데이터 시트보기 (PDF) - STMicroelectronics
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STP6NB50 Datasheet PDF : 10 Pages
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STP6NB50/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V ID = 2.9 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 5.8 A VGS = 10 V
Min.
Typ.
11.5
8
21
7.2
8
Max.
16
12
30
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V ID = 5.8 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
7
5
15
Max.
12
10
23
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 5.8 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 5.8 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
5.8
23.2
Unit
A
A
1.6
V
435
ns
3.3
µC
15
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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