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BSM35GB120DN2 데이터 시트보기 (PDF) - eupec GmbH
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BSM35GB120DN2
IGBT Power Module
eupec GmbH
BSM35GB120DN2 Datasheet PDF : 10 Pages
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BSM 35 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
70
A
60
I
F
55
50
45
40
T
j
=125°C
T
j
=25°C
35
30
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0
V
3.0
V
F
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
Diode
10
0
K/W
Z
thJC
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
s 10
0
8
Oct-21-1997
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