BSR42 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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BSR42 Datasheet PDF : 3 Pages
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Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector cut-off current ICBO
VCB=60V IE=0
VCB=60V IE=0,TA=150℃
100 nA
50 μA
Emitter-base cut-off
current
DC current gain
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Collector capacitance
Emitter capacitance
Transition frequency
IEBO
hFE
VCE(sat)
VBE(sat)
Cc
Ce
fT
VCE=5V IC=0A
VCE=5V IC=100uA
VCE=5V IC=100mA
VCE=5V IC=500mA
IC=150mA IB=15mA
IC=500mA IB=50mA
IC=150mA IB=15mA
IC=500mA IB=50mA
IE=ie=0A,VCB=10V
f=1MHz
IC=ic=0A,VEB=0.5V
f=1MHz
VCE=10V, IC=50mA,
f=100MHz
BSR40;BSR42
BSR41;BSR43
BSR40;BSR42
BSR41;BSR43
BSR40;BSR42
BSR41;BSR43
100 nA
10
30
40 120
100 300
30
50
0.25
V
0.5
1
V
1.2
12 pF
90 pF
100
MHz
Turn-on time
Turn-off time
ton
ICon=100mA;IBon=5mA;IBoff=-5mA
ton
250 ns
1
us
E072
Rev.A
www.gmicroelec.com
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