BU204 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BU204 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
BU204
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA, IB= 0
600
V
VcE(sat) Collector-Emitter Saturation Voltage IC=2A;IB=1A
VBE(sat) Base-Emitter Saturation Voltage
IC=2A;IB=1A
ICES
Collector Cutoff Current
VCE= 1300V; VBE=0
5.0
V
1.5
V
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5.0V ; lc= 0
10
mA
hFE
DC Current Gain
lc=2A;VCE=5V
2
COB
Output Capacitance
lE=0;VcB=10V;ftest=1MHz
50
PF
ft
Current-Gain—Bandwidth Product lc= 0.1 A; VCE= 5V; ftest= 1MHz
4
MHz
tf
Fall Time
IC=2A;IB=1A; LB= 25 u H
0.65
uS
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