SGH5N120RUF 데이터 시트보기 (PDF) - Fairchild Semiconductor

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SGH5N120RUF

Short Circuit Rated IGBT

Fairchild Semiconductor 

1000

Common Emitter

V =±

GE

15V,

R

G

=

30Ω

T = 25℃

C

T = 125℃

C

Eoff

Eon

Eoff

Eon

100

2

4

6

8

10

Collector Current, IC [A]

Fig 13. Switching Loss vs. Collector Current

16

Common Emitter

14 RL = 120Ω

T = 25℃

C

12

10

8

600V

400V

6

V = 200V

CC

4

2

0

0

10

20

30

Gate Charge, Qg [nC]

Fig 14. Gate Charge Characteristics

100

I MAX. (Pulsed)

C

10

I MAX. (Continuous)

C

50µs

100µs

1ms

1

DC Operation

0.1 Single Nonrepetitive

Pulse T = 25℃

C

Curves must be derated

linearly with increase

in temperature

0.01

0.1

1

10

100

Collector - Emitter Voltage, VCE [V]

1000

Fig 15. SOA Characteristics

10

Safe Operating Area

VGE = 20V, TC = 100℃

1

1

10

100

1000

Collector - Emitter Voltage, VCE [V]

Fig 16. Turn-Off SOA

10

1 0.5

0.2

0.1

0.1 0.05

0.02

0.01

0.01

single pulse

1E-3

10-5

10-4

10-3

10-2

10-1

Rectangular Pulse Duration [sec]

Pdm

t1

t2

Duty factor D = t1 / t2

Peak Tj = Pdm × Zthjc + TC

100

101

©2002 Fairchild Semiconductor Corporation

Fig 17. Transient Thermal Impedance of IGBT

SGH5N120RUF Rev. B2

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