FQD1N80TM(2014) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQD1N80TM Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FQD1N80TM
FQU1N80TU
Top Mark
FQD1N80
FQU1N80
Package
D-PAK
I-PAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
1.0
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS =10 V, ID =0.5 A
VDS = 50 V, ID = 0.5 A
3.0 --
5.0
V
-- 15.5 20
Ω
-- 0.75
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 150 195
pF
--
20
26
pF
-- 2.7 3.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 1.0 A,
RG = 25 Ω
--
10
30
ns
--
25
60
ns
--
15
40
ns
(Note 4) --
25
60
ns
VDS = 640 V, ID = 1.0 A,
-- 5.5 7.2
nC
VGS = 10 V
-- 1.1
--
nC
(Note 4) --
3.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.0 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.0 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 170 mH, IAS = 1.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 1.0 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
1.0
A
--
--
4.0
A
--
--
1.4
V
-- 300
--
ns
-- 0.6
--
µC
©2009 Fairchild Semiconductor Corporation
2
FQD1N80 / FQU1N80 Rev. C2
www.fairchildsemi.com
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