FZT1151A 데이터 시트보기 (PDF) - TY Semiconductor

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FZT1151A

PNP Silicon Planar Medium Power High Transistor

TY Semiconductor 

SMD Type

Transistors

Product specification

FZT1151A

■ Features

● Low saturation Voltage

● High Gain

SOT-223

6.50+0.2

-0.2

Unit: mm

3.50+0.2

-0.2

3.00+0.1

-0.1

4

1

2

3

2.9

4.6

0.70+0.1

-0.1

0.90+0.2

-0.2

7.00+0.3

-0.3

1 Base

2 Collector

3 Emitter

4 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Continuous Collector Current

power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

-45

V

VCEO

-40

V

VEBO

-5

V

IC

-3

A

PC

2.5

W

Tj

150

℃

Tstg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cut-off current

Emitter Cut-Off Current

DC current gain

Collector to emitter saturation voltage

Output capacitance

Transition frequency

■ Marking

Marking

1151A

Symbol

Test conditons

VCBO IC=-100μA

VCEO IC=-10mA

VEBO IE=-100μA

ICBO VCB =- 36 V, IE = 0

IEBO VEB=-4V,IC=0

IC = -10 mA; VCE = -2 V

hFE IC = -500mA; VCE =- 2V

IC = -2A; VCE = -2V

IC =- 1.8A; IB = -70mA

VCE(sat)

IC = -3A; IB = -250mA

Cob VCB =-10 V, IE = 0,f=1.0MHz

fT IC = -50 mA; VCE =-10V; f = 50 MHz

Min Typ Max Unit

-45

V

-40

V

-5.0

V

-100 nA

-100 nA

270 450

250

800

180 300

-0.26 V

-0.3 V

40

pF

145

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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