KTC3879 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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KTC3879 Datasheet PDF : 4 Pages
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NPN Silicon Epitaxial Planar Transistor
FEATURES
z High power gain.
Pb
Lead-free
APPLICATIONS
z High frequency application.
z HF,VHF band amplifier appilication.
Production specification
KTC3879
ORDERING INFORMATION
Type No.
Marking
KTC3879
RR/RO/RY
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
4
IC
Collector Current
50
IE
Emitter Current
-50
PC
Collector Power Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
℃
C110
Rev.A
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