NE4210M01-T1 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE4210M01-T1

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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PRELIMINARY DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE4210M01

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz

• 6pin super minimold package

• Gate Width: Wg = 200µm

ORDERING INFORMATION

Part Number

NE4210M01-T1

Package

6-pin super minimold

Supplying Form

Embossed tape 8 mm wide.

1, 2, 3 pins face to perforation

side of the tape

Marking

V73

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

VDS

4.0

V

Gate to Source Voltage

VGS

−3.0

V

Drain Current

ID

IDSS

mA

Gate Current

IG

100

µA

Total Power Dissipation

Ptot

Channel Temperature

Tch

125

mW

125

°C

Storage Temperature

Tstg

−65 to +125

°C

The information in this document is subject to change without notice.

Document No. P13682EJ1V0DS00 (1st edition)

Date Published August 1998 N CP(K)

Printed in Japan

©

1998

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