D965 데이터 시트보기 (PDF) - Nanjing International Group Co
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D965 Datasheet PDF : 3 Pages
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2SD965
NPN Silicon Epitaxial Planar Transistor
for low-frequency power and stroboscope
applications.
The transistor is subdivided into three
groups P, Q and R, according to its DC
current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
․Low collector-emitter saturation voltage
․Satisfactory operation performances at high
efficiency with the low voltage power supply
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VCBO
VCEO
VEBO
ICP
IC
Ptot
Tj
TS
40
20
7
8
5
750
150
-55 to +150
V
V
V
A
A
mW
OC
OC
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