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MBR40150CT 데이터 시트보기 (PDF) - Zibo Seno Electronic Engineering Co.,Ltd

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MBR40150CT
ZSELEC
Zibo Seno Electronic Engineering Co.,Ltd ZSELEC
MBR40150CT Datasheet PDF : 2 Pages
1 2
Z ibo Seno Electronic Engineering Co., Ltd.
MBR4040CT – MBR40200CT
40.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
B
C
D
C lassification Rating 94V-O
K

L
M
A
Mechanical Data
! Case: TO-220AB, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
12 3
E
G
J
N
HH
Pin 1 +
Pin 2 -
Pin 3 +
P
+
Case
TO-220AB
Dim Min Max
A 14.22 15.88
B
9.57 10.57
C
2.54 3.43
D
5.80 6.80
E
¾
6.35
G 12.70 14.73
H
2.29 2.79
J
0.51 1.14
K 3.53Æ 4.14Æ
L
3.56 4.83
M
1.07 1.47
N
0.30 0.64
P
2.03 2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
4040
CT
MBR
4045
CT
MBR
4050
CT
MBR
4060
CT
MBR
40100
CT
MBR
40150
CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
40
45
VR
50
60 100 150
MBR
40200
CT
200
Units
V
RMS Reverse Voltage
VR(RMS)
28
31
35
42
70 105 140
V
Average Rectified Output Current @TL = 75°C
(Note 1)
IO
40.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
200
A
(JEDEC Method)
Forward Voltage
@IF = 20A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
0.70
350
0.80
0.1
20
280
0.85
0.92
V
mA
200
pF
Typical Thermal Resistance (Note 1)
RJA
3.5
2.0
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
-55 to +175
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBR4040CT – MBR40200CT
1 of 2
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