MCH6321 데이터 시트보기 (PDF) - ON Semiconductor

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MCH6321

P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6

ON Semiconductor 

MCH6321

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=--1mA, VGS=0V

VDS=--20V, VGS=0V

VGS=±8V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--2A

ID=--2A, VGS=--4.5V

ID=--1A, VGS=--2.5V

ID=--0.2A, VGS=--1.8V

VDS=--10V, f=1MHz

See specified Test Circuit.

VDS=--10V, VGS=--4.5V, ID=--4A

IS=--4A, VGS=0V

Ratings

Unit

min

typ

max

--20

V

--1

mA

±10

mA

--0.4

--1.3

V

2.5

4.3

S

63

83 mW

88

125 mW

130

200 mW

375

pF

77

pF

58

pF

8.1

ns

31

ns

40

ns

39

ns

4.6

nC

0.8

nC

1.3

nC

--0.86

--1.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

VIN

0V

--4V

VIN

PW=10μs

D.C.≤1%

G

VDD= --10V

ID= --2A

RL=5Ω

D

VOUT

MCH6321

P.G

50Ω

S

Ordering Information

Device

MCH6321-TL-E

MCH6321-TL-W

Package

MCPH6

Shipping

3,000pcs./reel

memo

Pb-Free

Pb-Free and Halogen Free

No. A0963-2/5

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