MMFT960T3 데이터 시트보기 (PDF) - Motorola => Freescale

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MMFT960T3

Medium Power Field Effect Transistor

Motorola => Freescale 

MMFT960T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 10 µA)

Zero Gate Voltage Drain Current

(VDS = 60 V, VGS = 0)

Gate–Body Leakage Current

(VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.0 A)

Drain–to–Source On–Voltage

(VGS = 10 V, ID = 0.5 A)

(VGS = 10 V, ID = 1.0 A)

Forward Transconductance

(VDS = 25 V, ID = 0.5 A)

V(BR)DSS

60

—

—

Vdc

IDSS

—

—

10

µAdc

IGSS

—

—

50

nAdc

VGS(th)

1.0

—

3.5

Vdc

RDS(on)

—

—

1.7

Ohms

VDS(on)

Vdc

—

—

0.8

—

—

1.7

gfs

—

600

—

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VGS = 10 V, ID = 1.0 A,

VDS = 48 V)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Ciss

Coss

Crss

Qg

Qgs

Qgd

—

65

—

pF

—

33

—

—

7.0

—

—

3.2

—

nC

—

1.2

—

—

2.0

—

TYPICAL ELECTRICAL CHARACTERISTICS

5

TJ = 25°C

4

VGS = 10 V

3

8V

7V

2

6V

5V

1

4V

0

0

2

4

6

8

10

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1

TJ = 25°C

0.8

TJ = – 55°C

TJ = 125°C

0.6

0.4

VDS = 10 V

0.2

0

0

2

4

6

8

10

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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