2N6511 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6511 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2N6511
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0
250
V
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; RBE= 50Ω
300
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 3A
2.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.7
V
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
3.0 mA
hFE
DC Current Gain
IC= 4A; VCE= 3V
10
50
VCE= 35V,t= 1.0s,Nonrepetitive
3.16
A
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 200V,t= 1.0s,Nonrepetitive 0.1
A
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
100
pF
Switching Times
td
Delay Time
0.2 μs
tr
Rise Time
ts
Storage Time
VCC= 200V;
IC= 4A; IB1= -IB2= 0.8A
1.5 μs
5.0 μs
tf
Fall Time
1.5 μs
SPTECH website：www.superic-tech.com
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