2N7002K 데이터 시트보기 (PDF) - Wuxi NCE Power Semiconductor Co., Ltd
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2N7002K Datasheet PDF : 7 Pages
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http://www.ncepower.com
Pb Free Product
2N7002K
NCE N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=4.5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating：HBM 2500V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
7002K
2N7002K
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Limit
60
±20
0.3
0.8
0.35
-55 To 150
Unit
V
V
A
A
W
℃
350
℃/W
Min Typ Max Unit
60
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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