BSR302NL6327 데이터 시트보기 (PDF) - Infineon Technologies

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BSR302NL6327

OptiMOS®2 Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - minimal footprint

Symbol Conditions

R thJA

BSR302N

min.

Values

typ.

Unit

max.

-

-

250 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

30

-

Gate threshold voltage

V GS(th) V DS=VGS , I D=30 µA

1.2

1.7

Drain-source leakage current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

-

-

-V

2

1 μA

V DS=30 V, V GS=0 V,

T j=150 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on) V GS=4.5 V, I D=2.9 A

-

V GS=10 V, I D=3.7 A

-

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=3.7 A

-

100

-

100 nA

26

36 mΩ

18

23

12

-S

Rev. 1.3

page 2

2011-06-01

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