VBT1060C-E3/4W 데이터 시트보기 (PDF) - Vishay Semiconductors
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VBT1060C-E3/4W Datasheet PDF : 5 Pages
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New Product
VT1060C, VFT1060C, VBT1060C & VIT1060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
60 (minimum)
IF = 2.5 A
Instantaneous forward voltage per diode (1) IF = 5.0 A
TA = 25 °C
VF
IF = 2.5 A
IF = 5.0 A
TA = 125 °C
0.49
0.58
0.39
0.50
Reverse current per diode (2)
VR = 60 V
TA = 25 °C
TA = 125 °C
IR
-
6.9
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
0.70
-
0.60
700
25
UNIT
V
V
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT1060C
VFT1060C VBT1060C
Typical thermal resistance
per diode
per device
RθJC
3.5
2.5
6.5
5.0
3.5
2.5
VIT1060C
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT1060C-E3/4W
1.87
ITO-220AB
VFT1060C-E3/4W
1.75
TO-263AB
VBT1060C-E3/4W
1.39
TO-263AB
VBT1060C-E3/8W
1.39
TO-262AA
VIT1060C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
V(B,I)T1060C
10
8
6
VFT1060C
4
2
Mounted on Specific Heatsink
0
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
4.0
D = 0.5 D = 0.8
3.5
D = 0.3
3.0
D = 0.2
2.5
2.0
D = 0.1
D = 1.0
1.5
T
1.0
0.5
D = tp/T
tp
0
0
1
2
3
4
5
6
Average Forward Current (A)
Figure 2. Forward Power Dissipation Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89131
Revision: 08-Sep-09
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