1N60 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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1N60 Datasheet PDF : 2 Pages
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RoHS
1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
WEJ ELECTRONIC Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter
Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
tp 1 s
Forward continuous current
Ta=25℃
Storage temperature range
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
VRRM
VRRM
IFSM
IFSM
IF
IF
Tstg
Maximum Thermal Resistance
Tj=25℃
Parameter
Junction ambient
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
RthJA
CO.,LTD
Value
Unit
40
V
45
V
150
mA
500
mA
30
mA
50
mA
-65~+125
℃
Value
Unit
250
K/W
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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