ATP302 데이터 시트보기 (PDF) - ON Semiconductor

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ATP302

P-Channel Power MOSFET

ON Semiconductor 

ATP302

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=--1mA, VGS=0V

VDS=--60V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--35A

ID=--35A, VGS=--10V

ID=--35A, VGS=--4.5V

VDS=--20V, f=1MHz

See specified Test Circuit.

VDS=--36V, VGS=--10V, ID=--70A

IS=--70A, VGS=0V

Ratings

Unit

min

typ

max

--60

V

--10

μA

±10

μA

--1.2

--2.6

V

75

S

10

13 mΩ

13

18 mΩ

5400

pF

500

pF

370

pF

35

ns

430

ns

420

ns

500

ns

115

nC

20

nC

25

nC

--1.0

--1.5

V

Switching Time Test Circuit

Avalanche Resistance Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --36V

ID= --35A

RL=1.03Ω

D

VOUT

0V

--10V

≥50Ω

RG

50Ω

L

ATP302

VDD

ATP302

P.G

50Ω

S

Ordering Information

Device

ATP302-TL-H

Package

ATPAK

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1654-2/7

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