ZXM62N03E6 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZXM62N03E6

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

Not Recommended for New Design

Please Use ZXMN3A01E6TA

ZXM62N03E6

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance (1)

V(BR)DSS 30

IDSS

IGSS

VGS(th)

1.0

RDS(on)

Forward Transconductance

DYNAMIC (3)

gfs

1.1

1

100

0.11

0.15

V

ID=250µA, VGS=0V

µA VDS=30V, VGS=0V

nA

VGS=⎛ 20V, VDS=0V

V

I =250µA,

D

VDS=

VGS

Ω

VGS=10V, ID=2.2A

Ω

VGS=4.5V, ID=1.1A

S

VDS=10V,ID=1.1A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

380

pF

VDS=25 V, VGS=0V,

90

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.9

5.6

11.7

6.4

9.6

1.7

2.8

ns

ns VDD =15V, ID=2.2A

ns

RG=6.0Ω, RD=6.7Ω

(refer to test

ns circuit)

nC

VDS=24V,VGS=10V,

nC ID=2.2A (refer to

test circuit)

nC

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

18.8

Reverse Recovery Charge (3)

Qrr

11.4

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

Tj=25°C, IS=2.2A,

VGS=0V

ns Tj=25°C, IF=2.2A,

di/dt= 100A/µs

nC

ISSUE 1 - JUNE 2004

4

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