ISL2110ABZ 데이터 시트보기 (PDF) - Renesas Electronics
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ISL2110ABZ Datasheet PDF : 15 Pages
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ISL2110, ISL2111
Pin Configurations
ISL2111ARTZ
(10 LD 4x4 TDFN)
TOP VIEW
VDD 1
HB 2
HO 3
HS 4
NC 5
10 LO
9 VSS
8 LI
7 HI
6 NC
ISL2110AR4Z, ISL2111AR4Z
(12 LD 4x4 DFN)
TOP VIEW
VDD 1
NC 2
NC 3
HB 4
HO 5
HS 6
EPAD*
12 LO
11 VSS
10 NC
9 NC
8 LI
7 HI
*EPAD = EXPOSED PAD
ISL2110ABZ, ISL2111ABZ
(8 LD SOIC)
TOP VIEW
VDD 1
HB 2
HO 3
HS 4
8 LO
7 VSS
6 LI
5 HI
ISL2111BR4Z
(8 LD 4x4 DFN)
TOP VIEW
VDD 1
HB 2
HO 3
HS 4
EPAD*
8 LO
7 VSS
6 LI
5 HI
*EPAD = EXPOSED PAD
Pin Descriptions
SYMBOL
VDD
HB
HO
HS
HI
LI
VSS
LO
NC
EPAD
DESCRIPTION
Positive supply to lower gate driver. Bypass this pin to VSS.
High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap
diode is on-chip.
High-side output. Connect to gate of high-side power MOSFET.
High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin.
High-side input
Low-side input
Chip negative supply, which will generally be ground.
Low-side output. Connect to gate of low-side power MOSFET.
No connect
Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
FN6295 Rev.7.00
Mar 16, 2017
Page 4 of 15
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