BF904A 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF904A Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF904A; BF904AR; BF904AWR
FEATURES
• Specially designed for use at 5 V
supply voltage
• Short channel transistor with high
transfer admittance to input
capacitance ratio
• Low noise gain controlled amplifier
up to 1 GHz
• Superior cross-modulation
performance during AGC.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
• VHF and UHF applications with
3 to 7 V supply voltage such as
television tuners and professional
communications equipment.
handbook, 2 co3lumns
4
DESCRIPTION
Enhancement type field-effect
transistors. The transistors consist of
an amplifier MOS-FET with source
and substrate interconnected and an
internal bias circuit to ensure good
cross-modulation performance during
AGC.
The BF904A, BF904AR and
BF904AWR are encapsulated in the
SOT143B, SOT143R and SOT343R
plastic packages respectively.
2
Top view
1
MSB035
BF904AR marking code: %M8.
Fig.2 Simplified outline
(SOT143R).
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF904A marking code: %M7.
Fig.1 Simplified outline
(SOT143B).
halfpage
3
4
2
Top view
1
MSB842
BF904AWR marking code: MH.
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Tj
operating junction temperature
CONDITIONS
Ts ≤ 110 °C
f = 1 MHz
f = 800 MHz
MIN.
−
−
−
22
−
−
−
−
TYP.
−
−
−
25
2.2
25
2
−
MAX.
7
30
200
30
2.6
35
−
150
UNIT
V
mA
mW
mS
pF
fF
dB
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Rev. 04 - 13 November 2007
2 of 15
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