PSMN005-30K 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PSMN005-30K Datasheet PDF : 13 Pages
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PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
Rev. 2 — 22 December 2011
Product data sheet
1. Product profile
1.1 General description
SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
Computer motherboards
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Conditions
Tj ≥ 25 °C; Tj ≤ 150 °C
Tsp = 80 °C; VGS = 10 V; see Figure 1
Tsp = 80 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 9; see Figure 10
VGS = 4.5 V; ID = 20 A; VDS = 15 V;
Tj = 25 °C; see Figure 11
Min Typ Max Unit
-
-
30 V
-
-
20 A
-
-
3.5 W
-
4.4 5.5 mΩ
-
14 -
nC
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