Nexperia
120
Ider
(%)
80
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
03aa25
120
Pder
(%)
80
03aa17
40
40
0
0
50
100
150
200
Tsp (°C)
0
0
50
100
150
200
Tsp (°C)
Fig 1. Normalized continuous drain current as a
function of solder point temperature
103
ID
(A)
102
Limit RDSon = VDS/ ID
10
1
Fig 2. Normalized total power dissipation as a
function of solder point temperature
003aah006
tp =10 μ s
100 μ s
10 ms
100 ms
DC
10-1
10-1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN005-30K
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 December 2011
© Nexperia B.V. 2017. All rights reserved
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