PSMN005-30K 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
부품명
상세내역
제조사
PSMN005-30K Datasheet PDF : 13 Pages
| |||
Nexperia
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
60
ID
(A)
40
20
0
0
10 V 4.5 V
03ah06
4V
3.8 V
3.6 V
3.4 V
3.2 V
VGS = 3 V
0.2
0.4
0.6
0.8
1
VDS (V)
60
VDS > ID × RDSon
ID
(A)
40
03ah08
20
Tj = 150 °C
25 °C
0
0
1
2
3
4
5
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
1
ID
(A)
10-1
10-2
10-3
10-4
10-5
03af66
min
typ
max
4
VGS(th)
(V)
3
2
1
03af65
max
typ
min
10-6
0
1
2
3
4
VGS (V)
0
-60
20
100
180
Tj (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN005-30K
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 December 2011
© Nexperia B.V. 2017. All rights reserved
6 of 13
Share Link: 