PSMN009-100B 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PSMN009-100B Datasheet PDF : 13 Pages
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Nexperia
PSMN009-100B
N-channel TrenchMOS SiliconMAX standard level FET
103
ID
(A)
Limit RDSon = VDS/ID
102
10
1
1
DC
10
03ai01
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN009-100B_2
Product data sheet
Rev. 02 — 6 July 2009
© Nexperia B.V. 2017. All rights reserved
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