PSMN009-100B 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PSMN009-100B Datasheet PDF : 13 Pages
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Nexperia
PSMN009-100B
N-channel TrenchMOS SiliconMAX standard level FET
50
ID
(A)
40
Tj = 25 °C
03am54
10 V 6 V 5.6 V 5.4 V
5.2 V
30
5V
20
10
0
0
4.8 V
4.6 V
4.4 V
VGS = 4.2 V
0.2
0.4
0.6
0.8
1
VDS (V)
80
ID
(A)
VDS > ID x RDSon
60
03am56
40
20
0
0
175 °C
Tj = 25 °C
2
4
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10−1
ID
(A)
10−2
03aa35
min typ max
5
VGS(th)
(V)
4
max
03aa32
10−3
3
typ
10−4
2
min
10−5
1
10−6
0
2
4
6
VGS (V)
0
−60
0
60
120
180
Tj (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN009-100B_2
Product data sheet
Rev. 02 — 6 July 2009
© Nexperia B.V. 2017. All rights reserved
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