PXTA92 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
부품명
상세내역
제조사
PXTA92 Datasheet PDF : 9 Pages
| |||
Nexperia
PXTA92
300 V, 100 mA PNP high-voltage transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
96
K/W
-
-
16
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
7. Characteristics
Table 7. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 200 V; IE = 0 A
current
IEBO
emitter-base cut-off VEB = 3 V; IC = 0 A
current
hFE
DC current gain
VCE = 10 V; IC = 1 mA
VCE = 10 V;
IC = 10 mA
VCEsat
collector-emitter
saturation voltage
VCE = 10 V;
IC = 30 mA
IC = 20 mA; IB = 2 mA
VBEsat
base-emitter
saturation voltage
IC = 20 mA; IB = 2 mA
fT
transition frequency VCE = 20 V;
IC = 10 mA;
f = 100 MHz
Cc
collector capacitance VCB = 20 V;
IE = ie = 0 A; f = 1 MHz
Min Typ Max Unit
-
-
250 nA
-
-
100 nA
25
-
-
40
-
-
25
-
-
-
-
500 mV
-
-
900 mV
50
-
-
MHz
-
-
6
pF
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PXTA92
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 27 September 2011
© Nexperia B.V. 2017. All rights reserved
3 of 9
Share Link: 