PMBT2222 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PMBT2222 Datasheet PDF : 11 Pages
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10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A; Tj = 25 °C
current
VCB = 50 V; IE = 0 A; Tj = 125 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A; Tj = 25 °C
current
hFE
VCEsat
VBEsat
DC current gain
VCE = 10 V; IC = 0.1 mA; Tj = 25 °C
VCE = 10 V; IC = 1 mA; Tj = 25 °C
VCE = 10 V; IC = 10 mA; Tj = 25 °C
VCE = 10 V; IC = 10 mA; Tamb = -55 °C
VCE = 10 V; IC = 150 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tj = 25 °C
VCE = 1 V; IC = 150 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tj = 25 °C
VCE = 10 V; IC = 500 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tj = 25 °C
collector-emitter
saturation voltage
IC = 150 mA; IB = 15 mA; Tj = 25 °C
IC = 500 mA; IB = 50 mA; Tj = 25 °C
base-emitter saturation IC = 150 mA; IB = 15 mA; tp ≤ 300 µs;
voltage
δ ≤ 0.02; Tj = 25 °C
IC = 500 mA; IB = 50 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tj = 25 °C
td
delay time
IC = 150 mA; IBon = 15 mA;
tr
rise time
IBoff = -15 mA; VCC = 10 V; Tj = 25 °C
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
Cc
collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tj = 25 °C
Ce
emitter capacitance VEB = 500 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tj = 25 °C
fT
transition frequency VCE = 20 V; IC = 20 mA; f = 100 MHz;
Tj = 25 °C
NF
noise figure
VCE = 5 V; IC = 100 µA; RS = 1 kΩ;
f = 1 kHz; Tj = 25 °C
PMBT2222
NPN switching transistor
Min Typ Max Unit
-
-
10
nA
-
-
10
µA
-
-
10
nA
35
-
-
50
-
-
75
-
-
35
-
-
100 -
300
50
-
-
30
-
-
-
-
400 mV
-
-
1.6 V
-
-
1.3 V
-
-
2.6 V
-
-
15
ns
-
-
20
ns
-
-
35
ns
-
-
200 ns
-
-
60
ns
-
-
250 ns
-
-
8
pF
-
-
30
pF
250 -
-
MHz
-
-
4
dB
PMBT2222
Product data sheet
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5 August 2020
© Nexperia B.V. 2020. All rights reserved
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