2SD641 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD641

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V (Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V (Max.)@ IC= 10A

APPLICATIONS

·High voltage switching applications.

·High power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

600

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

5

A

150

W

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

2SD641

SPTECH website：www.superic-tech.com

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