2SD641 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD641

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB= 2A

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 5A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 50V; ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V

2SD641

MIN TYP. MAX UNIT

400

V

1.5

V

2.0

V

0.5 mA

1.0 mA

20

140

150

pF

4

MHz

SPTECH website：www.superic-tech.com

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