MMBTA45-L 데이터 시트보기 (PDF) - KEXIN Industrial

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MMBTA45-L

NPN Transistors

KEXIN Industrial 

SMD Type

Transistors

■ Features

● High Collector-Emitter Voltage

● Complement to MMBTA93

NPN Transistors

MMBTA45 (KMBTA45)

SOT-23-3

2.9 +0.2

-0.1

0.4 +0.1

-0.1

3

1

2

0.95 +0.1

-0.1

1.9 +0.1

-0.2

Unit: mm

0.15 +0.02

-0.02

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current -Pulsed

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature Range

Symbol

VCBO

VCEO

VEBO

IC

ICM

PC

RθJA

TJ

Tstg

Rating

400

350

6

200

300

350

357

150

-55 to 150

Unit

V

mA

mW

℃/W

℃

1. Base

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Collector- base breakdown voltage

Collector- emitter breakdown voltage *1

Emitter - base breakdown voltage

VCBO

VCEO

VEBO

Ic= 100 μA， IE= 0

Ic= 1 mA， IB= 0

IE= 100μA， IC= 0

Collector-base cut-off current

ICBO VCB= 400 V , IE= 0

Emitter cut-off current

IEBO VEB= 4V , IC=0

Collector-emitter saturation voltage *1

VCE(sat)1 IC=10 mA, IB=1mA

VCE(sat)2 IC=50 mA, IB=5mA

Base - emitter saturation voltage *1

VBE(sat) IC=10 mA, IB=1mA

hFE(1) VCE= 10V, IC= 1mA

DC current gain *1

hFE(2)

hFE(3)

VCE= 10V, IC= 10mA

VCE= 10V, IC= 50mA

hFE(4) VCE= 10V, IC= 100mA

Collector output capacitance

Cob VCB= 20V, IE= 0,f=1MHz

Transition frequency

fT VCE=20, IC= 10mA,f=30MHz

*1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

■ Classification of hfe(2)

Type

MMBTA45

MMBTA45-L

Range

80-300

100-200

Marking

3D

Min Typ Max Unit

400

350

V

6

100

nA

100

0.2

0.3 V

0.75

50

80

300

40

40

7 pF

50

MHz

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