STB3N60-1 데이터 시트보기 (PDF) - STMicroelectronics
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STB3N60-1 Datasheet PDF : 9 Pages
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STB3NA60-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V
ID = 1.5 A
RG = 18 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V
ID = 3 A
RG = 18 Ω
VGS = 10 V
(see test circuit, figure 5)
ID = 3 A
VGS = 10 V
VDD = Max Rating x 0.8
Min.
Typ.
14
25
300
22
6
9
Max.
20
35
30
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V
ID = 3 A
RG = 18 Ω
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
13
24
12
Max.
18
34
17
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 2.9 A
VGS = 0
trr
Reverse Recovery
Time
ISD = 3 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
Qrr
Reverse Recovery
(see test circuit, figure 5)
Charge
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
460
5.6
24
Max.
2.9
11.6
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9
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